Cutting edge transistors for semiconductors of the future

Date:
July 3, 2023
Source:
Lund University
Summary:
Transistors that can change properties are important elements
in the development of tomorrow's semiconductors. With standard
transistors approaching the limit for how small they can be,
having more functions on the same number of units becomes
increasingly important in enabling the development of small,
energy-efficient circuits for improved memory and more powerful
computers. Researchers have shown how to create new configurable
transistors and exert control on a new, more precise level.


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FULL STORY ========================================================================== Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors
approaching the limit for how small they can be, having more functions
on the same number of units becomes increasingly important in enabling
the development of small, energy-efficient circuits for improved memory
and more powerful computers.

Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.

In view of the constantly increasing need for better, more powerful
and efficient circuits, there is a great interest in reconfigurable transistors.

The advantage of these is that, in contrast to standard semiconductors,
it is possible to change the transistor's properties after they have
been manufactured.

Historically, computers' computational power and efficiency have been
improved by scaling down the silicon transistor's size (also known
as Moore's Law). But now a stage has been reached where the costs for continuing development along those lines have become much higher, and
quantum mechanics problems have arisen that have slowed development.

Instead, the search is on for new materials, components and circuits. Lund University is among the world leaders in III-V materials, which are an alternative to silicon. These are materials with considerable potential in
the development of high-frequency technology (such as parts for future 6G
and 7G networks), optical applications and increasingly energy-efficient electronic components.

Ferroelectric materials are used in order to realise this potential. These
are special materials that can change their inner polarisation when
exposed to an electric field. It can be compared to an ordinary magnet,
but instead of a magnetic north and south pole, electric poles are
formed with a positive and a negative charge on each side of the
material. By changing the polarisation, it is possible to control the transistor. Another advantage is that the material "remembers" its polarisation, even if the current is turned off.

Through a new combination of materials, the researchers have created ferroelectric "grains" that control a tunnel junction -- an electrical
bridging effect -- in the transistor. This is on an extremely small scale
-- a grain is 10 nanometres in size. By measuring fluctuations in the
voltage or current, it has been possible to identify when polarisation
changes in the individual grains and thus understand how this affects
the transistor's behaviour.

The newly published research has examined new ferroelectric memory in
the form of transistors with tunnel barriers in order to create new
circuit architectures.

"The aim is to create neuromorphic circuits, i.e. circuits that are
adapted for artificial intelligence in that their structure is similar
to the human brain with its synapses and neurons," says Anton Eriksson,
who recently completed his doctoral degree in nanoelectronics.

What is special about the new results is that it has been possible
to create tunnel junctions using ferroelectric grains that are located
directly adjacent to the junction. These nanograins can then be controlled
on an individual level, when previously it was only possible to keep
track of entire groups of grains, known as ensembles. In this way,
it is possible to identify and control separate parts of the material.

"In order to create advanced applications, you must first understand
the dynamics in individual grains down to the atomic level, as well as
the defects that exist. The increased understanding of the material can
be used to optimise the functions. By controlling these ferroelectric
grains, you can then create new semiconductors in which you can alter properties. By changing the voltage, you can thus produce different
functions in one and the same component," says Lars-Erik Wernersson,
professor of nanoelectronics.

The researchers have also examined how this knowledge can be used to
create different reconfigurable applications by manipulating in various
ways the signal that goes through the transistor. It could, for example,
be used for new memory cells or more energy-efficient transistors.

This new type of transistor is called ferro-TFET and can be used in both digital and analogue circuits.

"What's interesting is that it's possible to modulate the input signal
in various ways, for example by the transistor shifting phase, frequency doubling, and signal mixing. As the transistor remembers its properties,
even when the current is turned off, there is no need to reset it every
time the circuit is used," says Zhongyunshen Zho, doctoral student in nanoelectronics.

Another advantage of these transistors is that they can function at
low voltage. This makes them energy-efficient, which will be required,
for example, in tomorrow's wireless communication, Internet of Things
and quantum computers.

"I consider this to be leading-edge research of international
standing. It's good that in Lund and Sweden we are at the forefront
regarding semiconductors, especially in view of the EU's recently
enacted Chips Act, which aims to strengthen Europe's position regarding semiconductors," says Lars-Erik Wernersson.

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========================================================================== Journal References:
1. Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson.

Reconfigurable signal modulation in a ferroelectric tunnel
field-effect transistor. Nature Communications, 2023; 14 (1) DOI:
10.1038/s41467-023- 38242-w
2. Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson. Sensing
single domains and individual defects in scaled
ferroelectrics. Science Advances, 2023; 9 (5) DOI:
10.1126/sciadv.ade7098 ==========================================================================

Link to news story: https://www.sciencedaily.com/releases/2023/07/230703133015.htm

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